SK hynix appears to be expanding its ddr5 product stack with multiple new memory dies rated for a native 7200 mt/s, above the current JEDEC 6400 mt/s standard. Listings discovered on jd.com and shared by @unikoshardware show modules using part numbers not previously seen in the market. The findings indicate four new dies, all marked with a kb suffix to denote 7200 mt/s capability, and offering densities from 2 gb to 4 gb.
Notably, the lineup includes what the listings describe as SK hynixu2019s first 2 gb b-die and a 4 gb m-die, marking the first time that particular process node is offered at that 4 gb capacity. The report follows earlier sightings of second generation 3 gb a-die ic samples, where the sample reportedly used an 8-layer pcb. Analysts and manufacturers have previously indicated that to exploit higher native speeds and stability, platform partners will likely move to 10 or 12-layer pcbs to improve signal integrity, a change that becomes especially relevant when modules are overclocked.
The jd.com entries likely represent early samples or pre-production modules, and the article notes that improved designs are expected once production ramps up. SK hynix has not issued an official announcement about the new dies, but the retailer listings and part numbers suggest development and testing are well underway. The new parts, if confirmed, would expand SK hynixu2019s options for high-speed ddr5 modules and offer new density choices for board and module manufacturers targeting 7200 mt/s operation.
