Intel and SoftBank subsidiary Saimemory have entered an agreement to jointly develop and commercialize Z-Angle Memory technology for artificial intelligence and high-performance computing workloads. Z-Angle Memory is described as a stacked DRAM architecture intended to exceed current high-bandwidth memory solutions in capacity and bandwidth while reducing power consumption. The name reflects its use of vertical Z-axis stacking, and the effort is positioned as a response to rising memory bandwidth and efficiency demands from advanced compute systems.
The collaboration leverages Intel’s Next Generation DRAM Bonding work, which emerged from the U.S. government-backed Advanced Memory Technology program conducted with Sandia, Lawrence Livermore, and Los Alamos national laboratories. Recent Next Generation DRAM Bonding prototypes featuring eight vertically stacked DRAM layers have demonstrated full functionality using the new vertical stacking and bonding method, according to disclosures from Sandia in January. This underlying bonding technology forms a key foundation for the new Z-Angle Memory approach that Intel and Saimemory plan to bring to market.
According to reports, Saimemory is targeting two to three times the capacity of today’s high-bandwidth memory, with 40-50% lower power consumption, while aiming to keep costs competitive. Saimemory plans to have prototypes ready by early 2028, with commercial products following in 2029. SoftBank is said to be investing around ¥3 billion through the prototype phase to support this development roadmap. For Intel, the partnership represents a strategic return to advanced memory technologies after having exited the DRAM market decades ago, aligning the company more closely with emerging memory architectures tailored for artificial intelligence and high-performance computing.
