Samsung´s semiconductor division has reportedly achieved a significant milestone in its next-generation 2 nm GAA (Gate-All-Around) node, with wafer yield rates exceeding 40% during the latest round of experimental production. Sources inside the South Korean industry, cited by Asia Economy SK, indicate that the 2 nm process, known as SF2, is performing markedly better than Samsung´s previous-generation 3 nm effort, which struggled in late 2024 and was allegedly abandoned due to low yields. The company´s turnaround is attributed to a change in leadership and the early integration of High-NA EUV (Extreme Ultraviolet) lithography equipment, which has reinvigorated Samsung´s advanced semiconductor initiative.
Earlier in 2025, test yields for the SF2 process reportedly lingered between 20% and 30%, raising concerns about Samsung´s competitiveness relative to Taiwan´s TSMC, whose comparable 2 nm process was already achieving 60% yield rates according to insiders. The newly reported 40%+ yields signify continued progress, putting Samsung on a more promising trajectory as it races to rival its Taiwanese competitor and challenge its market dominance. Industry analysts now believe Samsung could reach mass production readiness by the third quarter of 2025—a timeline closely aligned with the planned manufacturing ramp for the flagship Exynos 2600 mobile chip.
Meanwhile, TSMC is rumored to have successfully completed its 2 nm trial phase, posting yield rates in the 70-80% range, and is preparing for cross-facility mass production later this year. However, expectations of steep price increases for TSMC’s advanced nodes could trigger a shift among major clients such as Apple, AMD, and NVIDIA toward alternative suppliers, including Samsung. Such dynamics could dramatically reshape next-generation chip supply for both mobile and Artificial Intelligence applications, as chipmakers and device manufacturers seek performance, pricing, and manufacturing reliability to meet surging global demand.
