Micron expands U.S. investments in DRAM manufacturing and R&D

Micron Technology and the Trump Administration outline major new U.S. investments targeting memory innovation, job creation, and leadership in Artificial Intelligence markets.

Micron Technology, in partnership with the Trump Administration, has announced a significant expansion of its U.S. operations, focusing on both domestic manufacturing and research and development for advanced memory technologies. The company estimates that these new investments will drive the creation of approximately 90,000 direct and indirect jobs. The plans include constructing a second cutting-edge memory fabrication facility in Boise, Idaho, broadening and modernizing the company´s Manassas, Virginia manufacturing site, and establishing advanced high bandwidth memory (HBM) packaging capabilities within the U.S., a move intended to foster long-term growth in markets crucial to Artificial Intelligence.

This wave of expansion also incorporates Micron´s commitment to boost research and development capabilities, confirming its intent to remain at the forefront of global memory technology. As previously disclosed, the company´s broader vision features further investments in New York, with a proposed megafab serving as a cornerstone for its East Coast manufacturing strategy. Altogether, Micron´s domestic roadmap outlines up to two high-volume, latest-generation fabrication plants in Idaho and as many as four in New York, coupled with advanced packaging and expanded R&D to strengthen American leadership in technology.

The proximity of Idaho´s forthcoming fabs to Micron´s existing R&D operations promises increased efficiency and a faster path to market for innovative products, notably in high bandwidth memory demanded by emerging sectors like Artificial Intelligence. This robust manufacturing and R&D foundation is intended to help Micron meet intensifying global demand, support its ambition to manufacture 40 percent of DRAM output in the U.S., and reinforce America´s competitive edge in next-generation semiconductor technologies.

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