SK hynix unveiled major advancements in high-bandwidth memory technology, including its flagship HBM4 solution, at the TSMC 2025 North America Technology Symposium in Santa Clara, California. The symposium, an annual gathering hosted by TSMC for its global partners to exchange the latest semiconductor technologies, saw SK hynix underscore its leadership in Artificial Intelligence memory solutions with the theme ´Memory, Powering AI and Tomorrow.´
Within its HBM Solution exhibition, SK hynix presented the 12-layer HBM4, which processes over 2 terabytes of data per second, positioning it as a next-generation high-bandwidth memory component for Artificial Intelligence and data-intensive applications. The company announced earlier this year that it is the first to provide HBM4 samples to major customers and expects to finish preparations for mass production in the second half of 2025. SK hynix also showcased its 16-layer HBM3E product, further cementing its advancements in memory technology for demanding computing environments.
The event featured both hardware samples and detailed 3D models of crucial technologies including Through-Silicon Via (TSV) and Advanced Mass Reflow-Molded Underfill (MR-MUF), illustrating technical breakthroughs enabling the next wave of memory performance. Also on display was NVIDIA´s latest Blackwell B100 GPU, which integrates the 8-layer HBM3E and highlights the synergy between advanced memory and next-gen processors. These exhibitions drew significant attention for their implications in accelerating Artificial Intelligence workloads and advancing the performance of data center and high-performance computing systems.
